MMBD770T1G

Manufacturer :

onsemi

Product Category :

Diodes - RF

Diode Element Material :

SILICON

Max Surge Current :

1A

Height :

850μm

Output Current :

200mA

JESD-609 Code :

e3

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Power Dissipation :

120mW

Forward Current :

200mA

Capacitance @ Vr, F :

1pF @ 20V 1MHz

Terminal Position :

Dual

Pbfree Code :

yes

Max Repetitive Reverse Voltage (Vrrm) :

70V

Voltage - Rated DC :

70V

Peak Reflow Temperature (Cel) :

260

Max Current Rating :

200mA

Packaging :

Tape and Reel (TR)

Length :

2.1mm

Terminal Form :

Gull wing

Factory Lead Time :

2 Weeks

Number of Pins :

3

Package / Case :

SC-70, SOT-323

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Operating Temperature :

-55°C~125°C TJ

Reverse Voltage (DC) :

70V

Base Part Number :

MMBD770

Peak Reverse Current :

200nA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Additional Feature :

LOW REVERSE LEAKAGE

Peak Non-Repetitive Surge Current :

1A

Width :

1.24mm

Frequency Band :

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Forward Voltage :

1V

Diode Capacitance-Max :

1pF

Polarity :

Standard

Surface Mount :

yes

Lead Free :

Lead Free

HTS Code :

8541.10.00.60

Max Reverse Leakage Current :

200nA

ECCN Code :

EAR99

Diode Type :

Schottky - Single

Max Forward Surge Current (Ifsm) :

1A

Current Rating :

1A

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Number of Elements :

1