MMBD770T1G

Manufacturer :

onsemi

Product Category :

Diodes - RF

Element Configuration :

Single

Power Dissipation :

120mW

Voltage - Rated DC :

70V

Additional Feature :

LOW REVERSE LEAKAGE

Peak Non-Repetitive Surge Current :

1A

Output Current :

200mA

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Polarity :

Standard

Pin Count :

3

Lead Free :

Lead Free

Published :

2006

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Max Forward Surge Current (Ifsm) :

1A

Peak Reverse Current :

200nA

Max Surge Current :

1A

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Length :

2.1mm

Diode Type :

Schottky - Single

Height :

850μm

Surface Mount :

yes

Terminal Position :

Dual

Operating Temperature :

-55°C~125°C TJ

Radiation Hardening :

No

Forward Current :

200mA

Frequency Band :

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Reverse Leakage Current :

200nA

Package / Case :

SC-70, SOT-323

Width :

1.24mm

ECCN Code :

EAR99

Capacitance @ Vr, F :

1pF @ 20V 1MHz

Terminal Form :

Gull wing

Max Current Rating :

200mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Repetitive Reverse Voltage (Vrrm) :

70V

HTS Code :

8541.10.00.60

Reverse Voltage (DC) :

70V

Factory Lead Time :

2 Weeks

Diode Capacitance-Max :

1pF

Current Rating :

1A

Number of Pins :

3

Diode Element Material :

SILICON

Base Part Number :

MMBD770

Forward Voltage :

1V