MMBD770T1G

Manufacturer :

onsemi

Product Category :

Diodes - RF

Voltage - Rated DC :

70V

JESD-609 Code :

e3

Max Current Rating :

200mA

Element Configuration :

Single

Diode Capacitance-Max :

1pF

Operating Temperature :

-55°C~125°C TJ

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Surge Current :

1A

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Diode Type :

Schottky - Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

120mW

Additional Feature :

LOW REVERSE LEAKAGE

Terminal Position :

Dual

Number of Terminations :

3

Capacitance @ Vr, F :

1pF @ 20V 1MHz

Diode Element Material :

SILICON

Height :

850μm

Package / Case :

SC-70, SOT-323

Pbfree Code :

yes

Forward Voltage :

1V

Number of Elements :

1

Frequency Band :

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Max Repetitive Reverse Voltage (Vrrm) :

70V

Max Reverse Leakage Current :

200nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Forward Current :

200mA

Length :

2.1mm

Number of Pins :

3

Peak Reverse Current :

200nA

Reverse Voltage (DC) :

70V

Factory Lead Time :

2 Weeks

Base Part Number :

MMBD770

Pin Count :

3

Peak Non-Repetitive Surge Current :

1A

Terminal Form :

Gull wing

Max Forward Surge Current (Ifsm) :

1A

Current Rating :

1A

Output Current :

200mA

Published :

2006

Polarity :

Standard

HTS Code :

8541.10.00.60

Width :

1.24mm