MJW3281AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

200W

Power Dissipation :

200W

Number of Terminations :

3

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

50μA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

30MHz

Number of Pins :

3

Collector Emitter Saturation Voltage :

400mV

Transistor Application :

AMPLIFIER

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Terminal Position :

Single

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

230V

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No

Packaging :

Tube

Surface Mount :

No

Collector Emitter Breakdown Voltage :

230V

Number of Elements :

1

Contact Plating :

Tin

JEDEC-95 Code :

TO-247AD

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 10A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pin Count :

3

Configuration :

Single

Voltage - Rated DC :

230V

Transition Frequency :

30MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 7A 5V

Max Collector Current :

15A

Collector Emitter Voltage (VCEO) :

230V

Current Rating :

15A

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Published :

2000

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

hFE Min :

50

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

30MHz

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks