MJE3055TTU
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- Mfr.Part #
- MJE3055TTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A TO220-3
- Stock
- 2,747
- In Stock ：
- 2,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Published :
- 2001
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 600mW
- Collector Emitter Breakdown Voltage :
- 525V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 700µA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.1V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 2MHz
- Voltage - Rated DC :
- 60V
- Current Rating :
- 10A
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Power - Max :
- 75W
- Number of Elements :
- 1
- Weight :
- 1.8g
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Height :
- 14.2mm
- Transition Frequency :
- 2MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Base Part Number :
- MJE3055
- hFE Min :
- 20
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 75W
- Collector Base Voltage (VCBO) :
- 70V
- ECCN Code :
- EAR99
- Frequency :
- 2MHz
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Max Collector Current :
- 10A
- Width :
- 4.5mm
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Element Configuration :
- Single
- Length :
- 9.9mm
- Lead Free :
- Lead Free
- Datasheets
- MJE3055TTU
NPN 150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE3055TTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 10A volts at its maximum.
MJE3055TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJE3055TTU Applications
There are a lot of ON Semiconductor
MJE3055TTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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