MJE172
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- Mfr.Part #
- MJE172
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 180
- In Stock ：
- 180
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 3A
- Power Dissipation :
- 12.5W
- hFE Min :
- 50
- Base Part Number :
- MJE172
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2006
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3mm
- Frequency :
- 50MHz
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Bulk
- Surface Mount :
- No
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Transition Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- -80V
- Height :
- 11.1mm
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 50MHz
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1.5W
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 3A
- Length :
- 7.8mm
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.7V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- MJE172
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE172G Overview
In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor
MJE172G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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