MJE15035G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

2W

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Weight :

4.535924g

Transition Frequency :

30MHz

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Max Collector Current :

4A

Element Configuration :

Single

Operating Temperature :

-65°C~150°C TJ

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 5V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Length :

10.28mm

Current - Collector Cutoff (Max) :

10μA ICBO

Lead Free :

Lead Free

Number of Elements :

1

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

350V

Current Rating :

-4A

Case Connection :

COLLECTOR

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Collector Emitter Saturation Voltage :

500mV

hFE Min :

100

Factory Lead Time :

5 Weeks

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Collector Emitter Breakdown Voltage :

350V

REACH SVHC :

No SVHC

Height :

9.28mm

Pin Count :

3

Transistor Type :

PNP

Peak Reflow Temperature (Cel) :

260

Frequency :

30MHz

Max Power Dissipation :

50W

Published :

2003

Width :

4.82mm

Gain Bandwidth Product :

30MHz

Number of Pins :

3

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

350V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

-350V

Surface Mount :

No