MJE15031

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

hFE Min :

40

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

8A

Voltage - Rated DC :

-150V

Power Dissipation :

2W

Collector Emitter Breakdown Voltage :

150V

Collector Emitter Voltage (VCEO) :

150V

Transistor Type :

PNP

Gain Bandwidth Product :

30MHz

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

AMPLIFIER

Element Configuration :

Single

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 2V

Number of Elements :

1

Power - Max :

50W

Surface Mount :

No

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tube

Frequency :

30MHz

Collector Base Voltage (VCBO) :

150V

Published :

2003

Current Rating :

-8A

Length :

10.28mm

Width :

4.82mm

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Pin Count :

3

Max Power Dissipation :

50W

Number of Pins :

3

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

500mV

JEDEC-95 Code :

TO-220AB

Height :

9.28mm

Mounting Type :

Through Hole

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100μA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Weight :

4.535924g

Pbfree Code :

yes

Transition Frequency :

30MHz