MJE15030

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

150V

Case Connection :

COLLECTOR

Max Power Dissipation :

50W

Surface Mount :

No

Current - Collector Cutoff (Max) :

100μA

Number of Pins :

3

Radiation Hardening :

No

Published :

2003

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

500mV

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

150V

Width :

4.826mm

Polarity/Channel Type :

NPN

Transition Frequency :

30MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~150°C TJ

Max Collector Current :

8A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Package / Case :

TO-220-3

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Power Dissipation :

2W

Pin Count :

3

Gain Bandwidth Product :

30MHz

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Transistor Type :

NPN

ECCN Code :

EAR99

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

150V

Voltage - Rated DC :

150V

Pbfree Code :

yes

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Frequency :

30MHz

Height :

15.748mm

Weight :

4.535924g

Number of Elements :

1

Mounting Type :

Through Hole

Packaging :

Tube

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 2V

Current Rating :

8A

hFE Min :

40

REACH SVHC :

No SVHC

Transistor Application :

AMPLIFIER

JEDEC-95 Code :

TO-220AB

Length :

10.2616mm