MJE15029G

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Mfr.Part #
MJE15029G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 120V 8A TO220
Stock
3,951
In Stock :
3,951

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
50W
Weight :
4.535924g
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Current Rating :
-8A
Voltage - Rated DC :
-120V
hFE Min :
40
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Number of Elements :
1
Published :
2004
Collector Emitter Breakdown Voltage :
120V
Pin Count :
3
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
120V
Contact Plating :
Tin
Transistor Application :
AMPLIFIER
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-65°C~150°C TJ
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Lifecycle Status :
ACTIVE (Last Updated: 23 hours ago)
Current - Collector Cutoff (Max) :
100μA
Case Connection :
COLLECTOR
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 2V
Height :
9.28mm
Polarity/Channel Type :
PNP
Collector Base Voltage (VCBO) :
120V
Transition Frequency :
30MHz
Radiation Hardening :
No
Max Power Dissipation :
50W
Pbfree Code :
yes
Max Collector Current :
8A
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
500mV
Emitter Base Voltage (VEBO) :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Gain Bandwidth Product :
30MHz
Width :
4.82mm
Frequency :
30MHz
Package / Case :
TO-220-3
Surface Mount :
No
Length :
10.28mm
Transistor Element Material :
SILICON
Packaging :
Tube
Transistor Type :
PNP
Factory Lead Time :
2 Weeks
Datasheets
MJE15029G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE15029G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, MJE15029G pinout, MJE15029G datasheet PDF, MJE15029G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE15029G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE15029G


PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

MJE15029G Overview


In this device, the DC current gain is 20 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-8A).30MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.

MJE15029G Features


the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 30MHz


MJE15029G Applications


There are a lot of ON Semiconductor
MJE15029G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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