MJE15029

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Mfr.Part #
MJE15029
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 120V 8A TO220
Stock
4,287
In Stock :
4,287

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Operating Temperature :
150°C
Supplier Device Package :
TO-220AB
Transistor Type :
PNP
Power - Max :
50W
Polarity :
PNP
Current - Collector (Ic) (Max) :
8A
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 2V
Emitter Base Voltage (VEBO) :
5V
Gain Bandwidth Product :
30MHz
Packaging :
Tube
Element Configuration :
Single
Collector Base Voltage (VCBO) :
120V
RoHS Status :
Non-RoHS Compliant
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
50W
Current Rating :
8A
Mounting Type :
Through Hole
Power Dissipation :
50W
Frequency - Transition :
30MHz
Package / Case :
TO-220-3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Voltage - Collector Emitter Breakdown (Max) :
120V
Collector Emitter Breakdown Voltage :
120V
hFE Min :
40
Current - Collector Cutoff (Max) :
100μA
Published :
2006
Collector Emitter Saturation Voltage :
500mV
Max Collector Current :
8A
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Operating Temperature :
-65°C~150°C TJ
Lead Free :
Contains Lead
Number of Elements :
1
Min Operating Temperature :
-65°C
Voltage - Rated DC :
120V
Frequency :
30MHz
Collector Emitter Voltage (VCEO) :
120V
Datasheets
MJE15029
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE15029 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, MJE15029 pinout, MJE15029 datasheet PDF, MJE15029 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE15029 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE15029


PNP -65°C~150°C TJ 100μA 1 Elements TO-220-3 Tube Through Hole

MJE15029 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.Supplier package TO-220AB contains the product.The device has a 120V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 8A volts can be achieved.

MJE15029 Features


the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
the supplier device package of TO-220AB


MJE15029 Applications


There are a lot of ON Semiconductor
MJE15029 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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