MJE13007G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

8A

RoHS Status :

ROHS3 Compliant

Max Collector Current :

8A

Number of Elements :

1

Width :

4.826mm

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Collector Emitter Breakdown Voltage :

400V

Pin Count :

3

Transistor Element Material :

SILICON

Transition Frequency :

14MHz

Height :

15.748mm

Radiation Hardening :

No

Number of Pins :

3

Number of Terminations :

3

Collector Base Voltage (VCBO) :

700V

Operating Temperature :

-65°C~150°C TJ

Voltage - Rated DC :

400V

Length :

10.2616mm

Power Dissipation :

80W

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Through Hole

Transistor Type :

NPN

Package / Case :

TO-220-3

Current - Collector Cutoff (Max) :

100μA

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

1V

Emitter Base Voltage (VEBO) :

9V

Pbfree Code :

yes

Contact Plating :

Tin

Factory Lead Time :

9 Weeks

Vce Saturation (Max) @ Ib, Ic :

3V @ 2A, 8A

Time@Peak Reflow Temperature-Max (s) :

40

Series :

SWITCHMODE™

Collector Emitter Voltage (VCEO) :

400V

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Packaging :

Tube

Max Power Dissipation :

80W

JESD-609 Code :

e3

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Frequency :

14MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V

hFE Min :

8

Lead Free :

Lead Free

Weight :

4.535924g

Case Connection :

COLLECTOR

Gain Bandwidth Product :

14MHz

Element Configuration :

Single