MJE13007
- Mfr.Part #
- MJE13007
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A TO220
- Stock
- 2,910
- In Stock :
- 2,910
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 4.826mm
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 8
- Case Connection :
- COLLECTOR
- Length :
- 10.2616mm
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 14MHz
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 14MHz
- Published :
- 2004
- Max Power Dissipation :
- 80W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 400V
- Current - Collector Cutoff (Max) :
- 100μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 9V
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 400V
- Surface Mount :
- No
- Number of Pins :
- 3
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Height :
- 15.748mm
- JEDEC-95 Code :
- TO-220AB
- Contact Plating :
- Tin
- Power Dissipation :
- 80W
- Radiation Hardening :
- No
- Pin Count :
- 3
- Factory Lead Time :
- 9 Weeks
- Max Collector Current :
- 8A
- Transition Frequency :
- 14MHz
- Transistor Application :
- SWITCHING
- Current Rating :
- 8A
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Series :
- SWITCHMODE™
- Pbfree Code :
- yes
- Datasheets
- MJE13007

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
MJE13007G Overview
In this device, the DC current gain is 5 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 2A, 8A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).14MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.
MJE13007G Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 14MHz
MJE13007G Applications
There are a lot of ON Semiconductor
MJE13007G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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