MJD6039T4
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- Mfr.Part #
- MJD6039T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A DPAK
- Stock
- 1,740
- In Stock ：
- 1,740
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Current Rating :
- 4A
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MJD6039
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Max Collector Current :
- 4A
- Terminal Form :
- Gull wing
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA
- Published :
- 2006
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Polarity :
- NPN
- Max Breakdown Voltage :
- 80V
- Halogen Free :
- Halogen Free
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 20W
- Max Power Dissipation :
- 1.75W
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 2.5V
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 80V
- Continuous Collector Current :
- 4A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 2A 4V
- Datasheets
- MJD6039T4
NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD6039T4G Overview
In this device, the DC current gain is 500 @ 2A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
MJD6039T4G Features
the DC current gain for this device is 500 @ 2A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
MJD6039T4G Applications
There are a lot of ON Semiconductor
MJD6039T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MJD6039T4G | onsemi | 15,904 | TRANS NPN DARL 80V 4A DPAK |
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