MJ4502G
- Mfr.Part #
- MJ4502G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 30A TO204
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Current Rating :
- 30A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Max Collector Current :
- 30A
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2000
- Voltage - Rated DC :
- -100V
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Pin Count :
- 2
- Terminal Form :
- PIN/PEG
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 2MHz
- Gain Bandwidth Product :
- 2MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tray
- Width :
- 26.67mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 800mV
- REACH SVHC :
- No SVHC
- Number of Pins :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- hFE Min :
- 25
- Collector Emitter Voltage (VCEO) :
- 90V
- JESD-609 Code :
- e3
- Frequency :
- 2MHz
- Package / Case :
- TO-204AA, TO-3
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Height :
- 8.51mm
- Max Power Dissipation :
- 200W
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 4V
- Length :
- 39.37mm
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 200W
- Factory Lead Time :
- 2 Weeks
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- MJ4502G

PNP -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ4502G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 7.5A 2V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 750mA, 7.5A.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 30A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 30A volts at its maximum.
MJ4502G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ4502G Applications
There are a lot of ON Semiconductor
MJ4502G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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