MD2147H3
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- Mfr.Part #
- MD2147H3
- Manufacturer
- Altera (Intel)
- Package / Case
- 18-CDIP
- Datasheet
- Download
- Description
- STANDARD SRAM, 4KX1, 55NS, MOS,
- Stock
- 340
- In Stock ：
- 340
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- Manufacturer :
- Altera (Intel)
- Product Category :
- Memory
- Package :
- Bulk
- Supplier Device Package :
- 18-CDIP
- Memory Width :
- 1
- Series :
- -
- Number of Terminals :
- 18
- Power Supplies :
- 5 V
- Output Characteristics :
- 3-STATE
- Memory Organization :
- 4K x 1
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C ~ 125°C (TC)
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Operating Mode :
- ASYNCHRONOUS
- Memory Density :
- 4096 bit
- Voltage - Supply :
- 4.5V ~ 5.5V
- Technology :
- SRAM - Asynchronous
- Supply Current-Max :
- 0.18 mA
- Manufacturer :
- Intel Corporation
- RoHS :
- Non-Compliant
- Access Time :
- 55 ns
- Package / Case :
- 18-CDIP
- Memory Interface :
- Parallel
- Reach Compliance Code :
- Unknown
- Write Cycle Time - Word, Page :
- 55ns
- Organization :
- 4KX1
- Mounting Type :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Terminal Pitch :
- 2.54 mm
- JESD-609 Code :
- e0
- I/O Type :
- Separate
- Package Shape :
- RECTANGULAR
- Memory Format :
- SRAM
- Standby Current-Max :
- 0.03 A
- Memory Size :
- 4Kbit
- Screening Level :
- 38535Q/M;38534H;883B
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Subcategory :
- SRAMs
- Temperature Grade :
- Military
- Product Status :
- Active
- JESD-30 Code :
- R-XDIP-T18
- Memory IC Type :
- STANDARD SRAM
- Parallel/Serial :
- Parallel
- Standby Voltage-Min :
- 4.5 V
- Number of Words :
- 4096 words
- Memory Type :
- Volatile
- Datasheets
- MD2147H3
Memory Altera (Intel) MD2147H3 Overview
The Memory Altera (Intel) MD2147H3 STANDARD SRAM is a high-performance memory chip, meticulously crafted to meet the stringent demands of sophisticated electronic systems. With a 4KX1 configuration and rapid access time of 55 nanoseconds, this SRAM module from Intel's Altera division ensures exceptional speed and reliability for applications requiring quick data retrieval and storage. Its MOS technology foundation enhances stability and efficiency, making it an ideal choice for industry professionals seeking robust memory solutions for critical applications.
MD2147H3 Features
The MD2147H3 SRAM features a compact 4K x 1-bit structure, delivering high-speed performance with a minimal 55 ns access time. Built using MOS technology, it ensures low power consumption while maintaining high reliability and stability under a range of environmental conditions. This makes the MD2147H3 particularly suitable for demanding applications in both commercial and industrial settings.
MD2147H3 Applications
- Embedded Systems: Utilized in complex embedded systems, the MD2147H3 provides efficient data storage and quick access necessary for real-time processing and control.
- Industrial Automation: In automation equipment, this SRAM facilitates the rapid execution of control algorithms, enhancing the responsiveness and efficiency of automation systems.
- Telecommunications: Essential for data buffering in communication equipment, the MD2147H3 supports high-speed operations crucial for telecommunications infrastructure.
- Medical Devices: Reliable and quick data access makes this SRAM suitable for critical medical applications, where precise and immediate data retrieval is vital.
- Aerospace: Its robust design ensures performance under the stringent conditions of aerospace applications, where reliability and data integrity are paramount.
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