MC33152DR2G
- Mfr.Part #
- MC33152DR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE 8SOIC
- Stock
- 64
- In Stock :
- 64
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- Manufacturer :
- onsemi
- Product Category :
- Gate Drivers
- Supply Voltage :
- 12V
- Mounting Type :
- Surface Mount
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Voltage - Supply :
- 6.1V~18V
- Nominal Supply Current :
- 10.5mA
- JESD-609 Code :
- e3
- Gate Type :
- N-Channel MOSFET
- Logic Voltage - VIL, VIH :
- 0.8V 2.6V
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 90 ps
- Number of Pins :
- 8
- Number of Terminations :
- 8
- Width :
- 4mm
- Max Output Current :
- 1.5A
- Factory Lead Time :
- 10 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Output Peak Current Limit-Nom :
- 1.5A
- Length :
- 5mm
- Radiation Hardening :
- No
- High Side Driver :
- yes
- Current - Peak Output (Source, Sink) :
- 1.5A 1.5A
- Base Part Number :
- MC33152
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Number of Functions :
- 2
- Rise / Fall Time (Typ) :
- 36ns 32ns
- Rise Time :
- 36ns
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 32 ns
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Form :
- Gull wing
- Operating Supply Voltage :
- 12V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Height :
- 1.5mm
- Operating Temperature :
- -40°C~150°C TJ
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 90 ns
- Driven Configuration :
- Low-Side
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 560mW
- Mount :
- Surface Mount
- Pin Count :
- 8
- Max Power Dissipation :
- 560mW
- Propagation Delay :
- 55 ns
- Number of Outputs :
- 2
- Halogen Free :
- Halogen Free
- Input Type :
- Non-Inverting
- Channel Type :
- Independent
- Datasheets
- MC33152DR2G

Gate Drivers onsemi MC33152DR2G Overview
Introducing the cutting-edge MC33152DR2G Gate Driver from onsemi, a leading manufacturer in the industry. This innovative integrated circuit offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications.
Designed with precision and efficiency in mind, the MC33152DR2G is engineered to drive low-side power MOSFETs and IGBTs with exceptional accuracy and speed. Its advanced features and robust construction ensure optimal performance even in the most demanding environments.
With a compact 8SOIC package, this gate driver offers easy integration into various systems, making it a versatile solution for modern electronic designs. Whether you're working on industrial equipment, automotive applications, or renewable energy systems, the MC33152DR2G delivers unmatched quality and performance.
MC33152DR2G Features
- Highly efficient gate driver for low-side power MOSFETs and IGBTs
- Precision control and fast switching capabilities
- Robust design for reliable operation in harsh environments
- Compact 8SOIC package for easy integration
- Wide operating voltage range for versatility
- Enhanced thermal performance for prolonged use
- Designed and manufactured by onsemi, a trusted leader in semiconductor technology
MC33152DR2G Applications
- Industrial Automation: The MC33152DR2G is ideal for controlling power MOSFETs and IGBTs in industrial automation systems, ensuring precise and efficient operation in manufacturing processes and machinery.
- Automotive Electronics: With its fast switching capabilities and reliable performance, this gate driver is perfect for automotive applications such as motor control, battery management, and LED lighting systems.
- Renewable Energy: In renewable energy systems such as solar inverters and wind turbines, the MC33152DR2G plays a crucial role in managing power transistors, maximizing energy conversion efficiency, and ensuring consistent performance under varying conditions.
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