MC33151DG

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Mfr.Part #
MC33151DG
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRVR LOW-SIDE 8SOIC
Stock
15,220
In Stock :
15,220

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Manufacturer :
onsemi
Product Category :
Gate Drivers
Lead Free :
Lead Free
Logic Voltage - VIL, VIH :
0.8V 2.6V
Width :
4mm
Channel Type :
Independent
Terminal Position :
Dual
Published :
2004
Power Dissipation :
560mW
Rise Time :
31ns
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Interface IC Type :
BUFFER OR INVERTER BASED MOSFET DRIVER
REACH SVHC :
No SVHC
Number of Functions :
2
Fall Time (Typ) :
32 ns
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
8
Supply Voltage :
12V
Output Peak Current Limit-Nom :
1.5A
Packaging :
Tube
Turn Off Time :
0.1 μs
Input Type :
Inverting
Turn On Delay Time :
100 ns
Number of Pins :
8
Factory Lead Time :
2 Weeks
Driven Configuration :
Low-Side
Base Part Number :
MC33151
Radiation Hardening :
No
Mount :
Surface Mount
Pbfree Code :
yes
Pin Count :
8
Max Power Dissipation :
560mW
Height :
1.5mm
Gate Type :
N-Channel MOSFET
Number of Outputs :
2
Voltage - Supply :
6.5V~18V
High Side Driver :
No
Operating Supply Voltage :
12V
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Current - Peak Output (Source, Sink) :
1.5A 1.5A
RoHS Status :
ROHS3 Compliant
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Operating Temperature :
-40°C~150°C TJ
Rise / Fall Time (Typ) :
31ns 32ns
Nominal Supply Current :
10.5mA
Output Current :
1.5A
Max Output Current :
1.5A
Halogen Free :
Halogen Free
Terminal Form :
Gull wing
Output Voltage :
11.2V
Propagation Delay :
100 ns
Length :
5mm
ECCN Code :
EAR99
Turn On Time :
0.1 μs
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
MC33151DG
Introducing Gate Drivers onsemi MC33151DG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:8, Number of Pins:8, Base Part Number:MC33151, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-40°C~150°C TJ, MC33151DG pinout, MC33151DG datasheet PDF, MC33151DG amp .Beyond Gate Drivers onsemi MC33151DG ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MC33151DG


Gate Drivers onsemi MC33151DG Overview

The onsemi MC33151DG is a high-performance, low-side gate driver designed to enhance the efficiency and speed of switching applications. This device, housed in a compact 8SOIC package, is engineered to drive MOSFETs and IGBTs with precision. Its robust output stage ensures high peak current capability, making it ideal for high-frequency operations and demanding environments. As a pivotal component in advanced electronic systems, the Gate Drivers onsemi MC33151DG optimizes power management and increases the reliability of the overall system, making it a top choice for engineers and designers looking to push the boundaries of power driving technology.

MC33151DG Features

The MC33151DG includes dual non-inverting outputs, a wide operating voltage range from 4.5 V to 18 V, and an enhanced input threshold for TTL and CMOS compatibility. It also boasts a high sink and source current of up to 1.5 A and features under-voltage lockout protection, which ensures stable operation under variable power conditions. These features make the MC33151DG an efficient and reliable choice for driving low-side elements in power circuits.

MC33151DG Applications

  • Motor Control Systems: Utilized in brushless DC and stepper motor drivers, the MC33151DG effectively handles the high peak current demands, improving the response time and reliability of motor control applications.
  • Switch Mode Power Supplies (SMPS): In SMPS circuits, this gate driver ensures efficient switching of power transistors, thus optimizing power efficiency and reducing thermal stress on the components.
  • DC-DC Converters: The MC33151DG is crucial for managing the gate driving in DC-DC conversion systems, where stable and robust performance is required to achieve efficient power conversion and regulation.
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