MBRD835LT4G
- Mfr.Part #
- MBRD835LT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- DIODE SCHOTTKY 35V 8A DPAK
- Stock
- 5,930
- In Stock :
- 5,930
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- Manufacturer :
- onsemi
- Product Category :
- Diodes - Rectifiers - Single
- Forward Current :
- 8A
- HTS Code :
- 8541.10.00.80
- Width :
- 6.731mm
- Pin Count :
- 3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Max Reverse Leakage Current :
- 1.4mA
- Output Current :
- 8A
- Length :
- 6.1976mm
- Termination :
- SMD/SMT
- Current Rating :
- 8A
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Operating Temperature - Junction :
- -65°C~150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Base Part Number :
- MBRD835
- Factory Lead Time :
- 14 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Application :
- Power
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Max Operating Temperature :
- 150°C
- Max Forward Surge Current (Ifsm) :
- 75A
- Peak Reverse Current :
- 1.4mA
- Max Repetitive Reverse Voltage (Vrrm) :
- 35V
- Pbfree Code :
- yes
- Diode Element Material :
- SILICON
- Voltage - Forward (Vf) (Max) @ If :
- 510mV @ 8A
- Average Rectified Current :
- 8A
- Min Operating Temperature :
- -65°C
- Published :
- 2005
- ECCN Code :
- EAR99
- Height :
- 2.2606mm
- Voltage - Rated DC :
- 35V
- Additional Feature :
- FREE WHEELING DIODE
- Number of Phases :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Max Surge Current :
- 75A
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Max Reverse Voltage (DC) :
- 35V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity :
- Standard
- Diode Type :
- Schottky
- Peak Non-Repetitive Surge Current :
- 75A
- Terminal Form :
- Gull wing
- Current - Reverse Leakage @ Vr :
- 1.4mA @ 35V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Case Connection :
- CATHODE
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Series :
- SWITCHMODE™
- Forward Voltage :
- 510mV
- Datasheets
- MBRD835LT4G
MBRD835LT4G Documents

Schottky Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 510mV @ 8A -65°C~150°C 1.4mA @ 35V 2-Termination Cut Tape (CT) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
MBRD835LT4G Overview
A reverse leakage current of 1.4mA volts can be generated by this device.A rectified current of 8A volts is averaged for this device.A value of 8A is the maximum forward current that can be allowed.This fuse has a current rating of 8A, which is the maximum current that will not deteriorate the fuse element over a long period.75A is the maximum value of surge current.As indicated by the data chart in the datasheets, the peak reverse is 1.4mA.
MBRD835LT4G Features
a maximal reverse leakage current of 1.4mA volts
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 1.4mA
MBRD835LT4G Applications
There are a lot of ON Semiconductor
MBRD835LT4G applications of single-phase diode rectifier.
- DC motor control and drives
- Battery chargers
- Welders
- Power converters
- Reverse Polarity Protection
- Ultra High-Speed Switching
- Freewheeling
- Polarity Protection Diode
- Recirculating Diode
- Switching Diode
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