MBRD660CTRLG

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Voltage :

900mV

Element Configuration :

Common Cathode

ECCN Code :

EAR99

Terminal Position :

Single

Additional Feature :

FREE WHEELING DIODE

Contact Plating :

Tin

Diode Type :

Schottky

Operating Temperature - Junction :

-65°C~175°C

Max Operating Temperature :

175°C

Halogen Free :

Halogen Free

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Forward Surge Current (Ifsm) :

75A

Base Part Number :

MBRD660CT

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Max Repetitive Reverse Voltage (Vrrm) :

60V

Peak Non-Repetitive Surge Current :

75A

Forward Current :

6A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Surface Mount :

yes

Pbfree Code :

yes

Diode Configuration :

1 Pair Common Cathode

Terminal Form :

Gull wing

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Forward (Vf) (Max) @ If :

700mV @ 3A

Current - Reverse Leakage @ Vr :

100μA @ 60V

Published :

2012

Output Current-Max :

3A

Length :

6.73mm

HTS Code :

8541.10.00.80

Pin Count :

3

Current Rating :

6A

Min Operating Temperature :

-65°C

Height :

2.38mm

Width :

6.22mm

Peak Reverse Current :

100μA

JESD-609 Code :

e3

Number of Phases :

1

REACH SVHC :

No SVHC

Max Reverse Voltage (DC) :

60V

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

60V

Number of Elements :

2

Average Rectified Current :

3A

Series :

SWITCHMODE™

Application :

FAST RECOVERY POWER

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Diode Element Material :

SILICON