M95512-DRMN6TP

Manufacturer :

STMicroelectronics

Product Category :

Memory

Memory Type :

Non-Volatile

Power Supplies :

2/5V

Organization :

64KX8

HTS Code :

8542.32.00.51

Supply Voltage-Max (Vsup) :

5.5V

Supply Voltage-Min (Vsup) :

1.8V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Memory Interface :

SPI

JESD-30 Code :

R-PDSO-G8

Terminal Position :

Dual

Operating Temperature :

-40°C~85°C TA

Memory Density :

524288 bit

Voltage - Supply :

1.8V~5.5V

Pin Count :

8

Qualification Status :

Not Qualified

Data Retention Time-Min :

40

Write Cycle Time - Word, Page :

5ms

Number of Functions :

1

Standby Current-Max :

0.000005A

Number of Terminations :

8

Supply Voltage :

2.5V

Pbfree Code :

yes

Length :

4.9mm

Write Protection :

HARDWARE/SOFTWARE

Write Cycle Time-Max (tWC) :

5ms

Serial Bus Type :

SPI

Operating Mode :

SYNCHRONOUS

Supply Current-Max :

0.008mA

Memory Size :

512Kb 64K x 8

Memory Format :

EEPROM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Parallel/Serial :

Serial

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height Seated (Max) :

1.75mm

Packaging :

Tape and Reel (TR)

Memory Width :

8

Mounting Type :

Surface Mount

Surface Mount :

yes

Width :

3.9mm

ECCN Code :

EAR99

Terminal Pitch :

1.27mm

Base Part Number :

M95512

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Clock Frequency :

16MHz

Endurance :

1000000 Write/Erase Cycles