LXP1002-23-0
- Mfr.Part #
- LXP1002-23-0
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SI PIN NON HERMETIC EPSM SMT
- Stock
- 160
- In Stock :
- 160
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- Manufacturer :
- Microchip Technology
- Product Category :
- Diodes - RF
- Maximum Power Dissipation (mW) :
- 250
- Mounting :
- Surface Mount
- Manufacturer :
- Microchip
- Maximum Reverse Voltage (V) :
- 100
- Military :
- No
- Power Dissipation-Max :
- 0.25 W
- Capacitance @ Vr, F :
- 0.32pF @ 50V, 1MHz
- Configuration :
- Single
- Minimum Operating Temperature (°C) :
- -55
- Brand :
- Microchip Technology / Atmel
- Package Height :
- 1.02
- HTS :
- 8541.10.00.80
- Type :
- Attenuator
- Frequency Range :
- UHF|VHF
- Number of Terminals :
- 3
- Diode Res Test Frequency :
- 100 MHz
- Diode Forward Resistance-Max :
- 4 Ω
- RoHS :
- Details
- Series :
- -
- Surface Mount :
- yes
- Subcategory :
- Diodes and Rectifiers
- Standard Package Name :
- SOT-23
- Maximum Operating Temperature (°C) :
- 125
- Product Category :
- PIN Diodes
- Maximum Reverse Leakage Current (uA) :
- 10
- Diode Type :
- PIN - Single
- Supplier Package :
- SOT-23
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- HTS Code :
- 8541.10.00.80
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Voltage - Peak Reverse (Max) :
- 50V
- ECCN Code :
- EAR99
- Breakdown Voltage-Min :
- 100 V
- Pin Count :
- 3
- Operating Temperature :
- -55°C ~ 125°C
- Product Type :
- PIN Diodes
- Frequency Band :
- L BAND
- Minority Carrier Lifetime-Nom :
- 1.5 μs
- Product Status :
- Active
- Diode Element Material :
- SILICON
- Terminal Position :
- Dual
- Supplier Device Package :
- SOT-23-3
- Diode Capacitance-Nom :
- 0.32 pF
- JESD-30 Code :
- R-PDSO-G3
- Resistance @ If, F :
- 4Ohm @ 100mA, 100MHz
- Application :
- Attenuator
- Diode Res Test Current :
- 100 mA
- Maximum Series Resistance @ Maximum IF (Ohm) :
- 4@100mA
- Lead Shape :
- Gull-wing
- Current - Max :
- 100 mA
- ECCN (US) :
- EAR99
- PCB changed :
- 3
- Package Width :
- 1.27
- Technology :
- Si
- Diode Capacitance-Max :
- 0.32 pF
- Qualification Status :
- Not Qualified
- Base Product Number :
- LXP1002
- Power Dissipation (Max) :
- 250 mW
- Package Length :
- 2.92
- Typical Carrier Life Time (us) :
- 1.5
- Package :
- Bulk
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Reverse Test Voltage :
- 50 V
- Package Shape :
- RECTANGULAR
- Datasheets
- LXP1002-23-0

PIN - Single 0.32pF @ 50V, 1MHz -55°C ~ 125°C SILICON DUAL TO-236-3, SC-59, SOT-23-3
LXP1002-23-0 Overview
This device can consume a maximum reverse voltage of about 100.The device is designed to operate from a maximal current of 100 mA volts.A maximum reverse voltage of 50V is specified in the applicable device specifications.The device may occasionally run at its lowest breakdown voltage.Reverse test voltages within 50 V are required for a valid conversion result.
LXP1002-23-0 Features
from a maximum current of 100 mA volts
at its lowest breakdown voltage of 100 V
LXP1002-23-0 Applications
There are a lot of Microchip Technology
LXP1002-23-0 applications of RF diodes.
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
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