LTC4446EMS8E#TRPBF
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- Mfr.Part #
- LTC4446EMS8E#TRPBF
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Stock
- 49,913
- In Stock ：
- 49,913
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Gate Drivers
- Gate Type :
- N-Channel MOSFET
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- JESD-609 Code :
- e3
- Number of Terminations :
- 8
- Surface Mount :
- yes
- Logic Voltage - VIL, VIH :
- 1.85V 3.25V
- Turn Off Time :
- 0.04 µs
- High Side Driver :
- yes
- Output Peak Current Limit-Nom :
- 3A
- Driven Configuration :
- Half-Bridge
- Rise / Fall Time (Typ) :
- 8ns 5ns
- Mounting Type :
- Surface Mount
- Width :
- 3mm
- Turn On Time :
- 0.045 µs
- JESD-30 Code :
- S-PDSO-G8
- Number of Functions :
- 1
- Pin Count :
- 8
- Number of Drivers :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Height Seated (Max) :
- 1.1mm
- Packaging :
- Tape and Reel (TR)
- Current - Peak Output (Source, Sink) :
- 2.5A 3A
- Channel Type :
- Independent
- Terminal Form :
- Gull wing
- Voltage - Supply :
- 7.2V~13.5V
- Operating Temperature :
- -40°C~125°C TJ
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Peak Reflow Temperature (Cel) :
- 250
- Length :
- 3mm
- High Side Voltage - Max (Bootstrap) :
- 114V
- Factory Lead Time :
- 16 Weeks
- Qualification Status :
- Not Qualified
- Input Type :
- Non-Inverting
- Supply Voltage :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Pitch :
- 0.65mm
- Base Part Number :
- LTC4446
- Datasheets
- LTC4446EMS8E#TRPBF
Gate Drivers Analog Devices, Inc. LTC4446EMS8E#TRPBF Overview
The Gate Drivers Analog Devices, Inc. LTC4446EMS8E#TRPBF is a high-performance, dual high-side N-channel MOSFET driver designed to maximize efficiency in power conversion applications. This integrated circuit ensures robust operation with its ability to drive MOSFET gates with up to 4A of peak output current. The LTC4446EMS8E#TRPBF is optimized for handling high-voltage and high-speed transients, making it an ideal choice for challenging environments where reliability and performance are paramount.
LTC4446EMS8E#TRPBF Features
The LTC4446EMS8E#TRPBF features include powerful 4A peak drive currents and an adaptive shoot-through protection. It operates from a supply voltage up to 35V, providing a versatile solution for various half-bridge configurations. Additional features such as independent high-side and low-side input logic signals, under-voltage lockout, and a robust thermal performance enhance its usability in critical applications.
LTC4446EMS8E#TRPBF Applications
- DC/DC Converters - Utilizes dual drivers to optimize switch timing and minimize power loss, enhancing efficiency in DC/DC conversion circuits.
- Solar Power Inverters - Ensures reliable switching and long-term durability under fluctuating environmental conditions typical in solar energy systems.
- Motor Control Systems - Provides precise gate drive control required for high-performance motor speed and torque management.
- UPS Systems - Drives MOSFETs efficiently to ensure uninterrupted power supply operations with minimal heat generation.
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