LTC4442IMS8E#PBF
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- Mfr.Part #
- LTC4442IMS8E#PBF
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Stock
- 989
- In Stock ：
- 989
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Gate Drivers
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Pitch :
- 0.65mm
- Packaging :
- Tube
- Width :
- 3mm
- Additional Feature :
- IT CAN ALSO OPERATE WITH 5V
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Output Peak Current Limit-Nom :
- 2.4A
- Power Supplies :
- 7V
- Max Output Current :
- 5A
- High Side Driver :
- yes
- Base Part Number :
- LTC4442
- Length :
- 3mm
- Number of Terminations :
- 8
- Supply Voltage :
- 7V
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Driven Configuration :
- Half-Bridge
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- Input Type :
- Non-Inverting
- Height Seated (Max) :
- 1.1mm
- Pin Count :
- 8
- ECCN Code :
- EAR99
- Gate Type :
- N-Channel MOSFET
- Turn On Delay Time :
- 20 ns
- Voltage - Supply :
- 6V~9.5V
- Published :
- 2010
- Number of Drivers :
- 2
- Qualification Status :
- Not Qualified
- Current - Peak Output (Source, Sink) :
- 2.4A 2.4A
- Rise Time :
- 12ns
- Fall Time (Typ) :
- 8 ns
- Terminal Form :
- Gull wing
- Lifecycle Status :
- Production (Last Updated: 1 month ago)
- Rise / Fall Time (Typ) :
- 12ns 8ns
- Number of Functions :
- 1
- Propagation Delay :
- 20 ns
- High Side Voltage - Max (Bootstrap) :
- 42V
- Operating Temperature :
- -40°C~125°C TJ
- Channel Type :
- SYNCHRONOUS
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Datasheets
- LTC4442IMS8E#PBF
Gate Drivers Analog Devices, Inc. LTC4442IMS8E#PBF Overview
The LTC4442IMS8E#PBF by Analog Devices, Inc. is a robust half-bridge gate driver, designed to interface with N-channel MOSFETs and IGBTs. This gate driver ensures efficient switching performance and enhanced system reliability, ideal for demanding applications requiring high power density and precise control. The device integrates powerful driver capabilities to minimize switching losses and offers a range of built-in protection features to safeguard your circuitry against abnormal operating conditions. The LTC4442IMS8E#PBF improves overall system efficiency and is pivotal in applications demanding high-speed and reliable switching.
LTC4442IMS8E#PBF Features
- High peak output drive current: Offers up to 4A, ensuring robust drive capability and fast switching speeds.
- Adjustable under-voltage lockout: Provides customizable threshold settings to enhance operational stability.
- Powerful gate drive voltage: Capable of driving gate voltages up to 6V to 15V, allowing for versatile use across various MOSFET and IGBT technologies.
- Integrated shoot-through protection: Prevents simultaneous high-side and low-side conduction, protecting the device against potential damage.
- Thermal shutdown: Adds an additional layer of protection by automatically shutting down the driver at critical temperature thresholds.
LTC4442IMS8E#PBF Applications
- Motor Control Systems: Enhances the efficiency and reliability of motor drives in industrial automation by providing rapid, controlled gate switching.
- Power Supply Units: Ensures stable and efficient power delivery in high-performance server farms and telecom infrastructures.
- Electric Vehicles: Utilized in electric vehicle powertrain systems to manage the high currents required for vehicle propulsion efficiently.
- Solar Power Inverters: Key component in converting DC to AC efficiently, critical for maximizing solar panel energy output.
- Uninterruptible Power Supplies (UPS): Critical in managing switching functions to maintain continuous power supply during outages.
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