LTC4442EMS8E#PBF

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Mfr.Part #
LTC4442EMS8E#PBF
Manufacturer
Analog Devices, Inc.
Package / Case
8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8MSOP
Stock
13,354
In Stock :
13,354

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Manufacturer :
Analog Devices, Inc.
Product Category :
Gate Drivers
Output Peak Current Limit-Nom :
2.4A
Width :
3mm
Factory Lead Time :
8 Weeks
Published :
2005
Number of Drivers :
2
JESD-30 Code :
S-PDSO-G8
ECCN Code :
EAR99
Length :
3mm
Driven Configuration :
Half-Bridge
Power Supplies :
7V
Additional Feature :
IT CAN ALSO OPERATE WITH 5V
Number of Functions :
1
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn)
Number of Terminations :
8
Package / Case :
8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
JESD-609 Code :
e3
Packaging :
Tube
Input Type :
Non-Inverting
Terminal Position :
Dual
Pin Count :
8
Height Seated (Max) :
1.1mm
Gate Type :
N-Channel MOSFET
Base Part Number :
LTC4442
Channel Type :
SYNCHRONOUS
Mounting Type :
Surface Mount
High Side Driver :
yes
Rise / Fall Time (Typ) :
12ns 8ns
Operating Temperature :
-40°C~125°C TJ
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Current - Peak Output (Source, Sink) :
2.4A 2.4A
Time@Peak Reflow Temperature-Max (s) :
30
High Side Voltage - Max (Bootstrap) :
42V
Terminal Pitch :
0.65mm
Surface Mount :
yes
Terminal Form :
Gull wing
Voltage - Supply :
6V~9.5V
Supply Voltage :
7V
Datasheets
LTC4442EMS8E#PBF
Introducing Gate Drivers Analog Devices, Inc. LTC4442EMS8E#PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Package / Case:8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad, Base Part Number:LTC4442, Mounting Type:Surface Mount, Operating Temperature:-40°C~125°C TJ, LTC4442EMS8E#PBF pinout, LTC4442EMS8E#PBF datasheet PDF, LTC4442EMS8E#PBF amp .Beyond Gate Drivers Analog Devices, Inc. LTC4442EMS8E#PBF ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. LTC4442EMS8E#PBF


Gate Drivers Analog Devices, Inc. LTC4442EMS8E#PBF Overview

Introducing the LTC4442EMS8E#PBF, a sophisticated Gate Driver from Analog Devices, Inc., designed for high-efficiency, high-speed switching applications. This device ensures optimal performance in driving N-channel MOSFETs and IGBTs, facilitating robust half-bridge configurations. Its compact 8-MSOP package allows for seamless integration into space-constrained applications, while providing exceptional thermal performance and reliability. The LTC4442EMS8E#PBF excels in environments requiring quick switching and precise control, making it an indispensable component for advanced power conversion systems.

LTC4442EMS8E#PBF Features

The LTC4442EMS8E#PBF gate driver is engineered with an array of features to enhance system reliability and performance, including robust peak output currents, wide operating voltage range, and built-in under-voltage lockout protection. It also offers matched propagation delays which are crucial for maintaining system integrity during high frequency operation. Additionally, its powerful drive capability and minimal cross-conduction promote efficiency and reduce power dissipation.

LTC4442EMS8E#PBF Applications

  • Switch Mode Power Supplies (SMPS): Enhances efficiency and response time by driving high-speed switches in power conversion circuits.
  • Motor Controllers: Provides the necessary drive strength to control power MOSFETs in various motor control applications, from automotive to industrial settings.
  • DC-DC Converters: Utilizes robust driving capabilities to manage MOSFETs effectively, ensuring stable operation and optimized power management for DC-DC conversion.
  • Solar Inverters: Employs fast switching capabilities to improve efficiency and reliability in photovoltaic (PV) inverter applications.
  • Uninterruptible Power Supplies (UPS): Drives critical components to ensure continuous power supply and minimal interruption during power outages.
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