LF356N/NOPB

Manufacturer :

Texas Instruments

Product Category :

Instrumentation, OP Amps, Buffer Amps

Series :

BI-FET™

Mounting Type :

Through Hole

Amplifier Type :

J-FET

Slew Rate :

12V/µs

Common Mode Rejection Ratio :

80 dB

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

9.81mm

Lead Free :

Lead Free

Micropower :

No

Voltage - Supply, Single/Dual (±) :

±15V

Number of Terminations :

8

Neg Supply Voltage-Nom (Vsup) :

-15V

Width :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Low-Offset :

No

Radiation Hardening :

No

Terminal Pitch :

2.54mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Number of Functions :

1

Output Current per Channel :

25mA

Voltage Gain :

106.02dB

Bandwidth :

5MHz

Supply Voltage :

15V

Number of Channels :

1

Max Junction Temperature (Tj) :

100°C

Mount :

Through Hole

ECCN Code :

EAR99

Frequency Compensation :

yes

Height :

5.08mm

Pin Count :

8

Max Output Current :

25mA

Package / Case :

8-DIP (0.300, 7.62mm)

Bias Current-Max (IIB) @25C :

0.0002μA

Operating Temperature :

0°C~70°C

REACH SVHC :

No SVHC

Output Current :

25mA

Nominal Supply Current :

5mA

Ambient Temperature Range High :

70°C

Unity Gain BW-Nom :

5000 kHz

Power Dissipation :

670mW

Contact Plating :

Tin

Pbfree Code :

yes

Average Bias Current-Max (IIB) :

0.0002μA

Factory Lead Time :

6 Weeks

Settling Time :

1.5 μs

Programmable Power :

No

Dual Supply Voltage :

15V

Operating Supply Current :

5mA

Input Offset Current-Max (IIO) :

0.00005μA

Terminal Position :

Dual

Low-Bias :

yes

Power Supply Rejection Ratio (PSRR) :

80dB

Input Offset Voltage (Vos) :

3mV

Current - Input Bias :

30pA

Weight :

4.535924g

Max Power Dissipation :

670mW

Architecture :

VOLTAGE-FEEDBACK

JESD-609 Code :

e3

Packaging :

Tube

Base Part Number :

LF356

Thickness :

3.9mm