KSP06TA
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- Mfr.Part #
- KSP06TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 5,911
- In Stock ：
- 5,911
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Width :
- 3.86mm
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Packaging :
- Tape and Box (TB)
- Weight :
- 240mg
- Current Rating :
- 500mA
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- KSP06
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Published :
- 2002
- JESD-609 Code :
- e3
- Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Voltage - Rated DC :
- 80V
- Length :
- 4.58mm
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 11 hours ago)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 80V
- Height :
- 4.58mm
- hFE Min :
- 50
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- KSP06TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP06TA Overview
DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSP06TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP06TA Applications
There are a lot of ON Semiconductor
KSP06TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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