KSP06TA
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- Mfr.Part #
- KSP06TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 1,251
- In Stock ：
- 1,251
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Frequency :
- 100MHz
- Weight :
- 240mg
- Transistor Element Material :
- SILICON
- Height :
- 4.58mm
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 50
- Current Rating :
- 500mA
- Transition Frequency :
- 100MHz
- Base Part Number :
- KSP06
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Published :
- 2002
- Transistor Application :
- AMPLIFIER
- Width :
- 3.86mm
- JESD-609 Code :
- e3
- Power Dissipation :
- 625mW
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 11 hours ago)
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Voltage - Rated DC :
- 80V
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Length :
- 4.58mm
- Emitter Base Voltage (VEBO) :
- 4V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- KSP06TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP06TA Overview
DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSP06TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP06TA Applications
There are a lot of ON Semiconductor
KSP06TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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