KSP05TA
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- Mfr.Part #
- KSP05TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 1,880
- In Stock ：
- 1,880
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 60V
- Frequency :
- 100MHz
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Weight :
- 240mg
- Emitter Base Voltage (VEBO) :
- 4V
- Voltage - Rated DC :
- 60V
- Power Dissipation :
- 625mW
- Transition Frequency :
- 100MHz
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2007
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSP05
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- hFE Min :
- 50
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Factory Lead Time :
- 17 Weeks
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Datasheets
- KSP05TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP05TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 100mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
KSP05TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP05TA Applications
There are a lot of ON Semiconductor
KSP05TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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