KSE350STU
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- Mfr.Part #
- KSE350STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO126-3
- Stock
- 34,788
- In Stock ：
- 34,788
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- ECCN Code :
- EAR99
- Weight :
- 761mg
- Voltage - Rated DC :
- -300V
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Max Power Dissipation :
- 20W
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -300V
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 300V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 500mA
- Published :
- 2001
- Current Rating :
- -500mA
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 300V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 30
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Factory Lead Time :
- 7 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Terminations :
- 3
- Power Dissipation :
- 20W
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Datasheets
- KSE350STU
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
KSE350STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 3MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
KSE350STU Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 3MHz
KSE350STU Applications
There are a lot of ON Semiconductor
KSE350STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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