KSE13003H2ASTU

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Mfr.Part #
KSE13003H2ASTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 400V 1.5A TO126-3
Stock
28,415
In Stock :
28,415

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Saturation Voltage :
500mV
Transistor Type :
NPN
ECCN Code :
EAR99
Frequency :
4MHz
RoHS Status :
ROHS3 Compliant
Width :
3.25mm
Transition Frequency :
4MHz
Packaging :
Tube
Power Dissipation :
20W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
8mm
Operating Temperature :
150°C TJ
Number of Pins :
3
Collector Base Voltage (VCBO) :
700V
REACH SVHC :
No SVHC
Element Configuration :
Single
Gain Bandwidth Product :
4MHz
hFE Min :
8
Current Rating :
1.5A
Collector Emitter Breakdown Voltage :
400V
Factory Lead Time :
6 Weeks
Max Power Dissipation :
20W
Transistor Application :
SWITCHING
Base Part Number :
KSE13003
Collector Emitter Voltage (VCEO) :
400V
Max Collector Current :
1.5A
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Mounting Type :
Through Hole
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Emitter Base Voltage (VEBO) :
9V
Vce Saturation (Max) @ Ib, Ic :
3V @ 500mA, 1.5A
JESD-609 Code :
e3
Voltage - Rated DC :
400V
Mount :
Through Hole
Number of Terminations :
3
Polarity/Channel Type :
NPN
Published :
2008
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 500mA 2V
Transistor Element Material :
SILICON
Height :
11mm
Weight :
761mg
Package / Case :
TO-225AA, TO-126-3
Pbfree Code :
yes
Lead Free :
Lead Free
Number of Elements :
1
Datasheets
KSE13003H2ASTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSE13003H2ASTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:KSE13003, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, KSE13003H2ASTU pinout, KSE13003H2ASTU datasheet PDF, KSE13003H2ASTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSE13003H2ASTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSE13003H2ASTU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSE13003H2ASTU Overview


This device has a DC current gain of 14 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 3V @ 500mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 1.5A volts is possible.

KSE13003H2ASTU Features


the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz


KSE13003H2ASTU Applications


There are a lot of ON Semiconductor
KSE13003H2ASTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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