KSD471AYBU
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- Mfr.Part #
- KSD471AYBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92-3
- Stock
- 3,529
- In Stock ：
- 3,529
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 179mg
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Base Part Number :
- KSD471
- Frequency :
- 130MHz
- hFE Min :
- 120
- Current Rating :
- 1A
- Transition Frequency :
- 130MHz
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 30V
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Power Dissipation :
- 800mW
- Collector Base Voltage (VCBO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation :
- 800mW
- Gain Bandwidth Product :
- 130MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Max Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Datasheets
- KSD471AYBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD471AYBU Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
KSD471AYBU Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
KSD471AYBU Applications
There are a lot of ON Semiconductor
KSD471AYBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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