KSD363R

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

120V

Number of Pins :

3

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 1A

Factory Lead Time :

16 Weeks

Length :

9.9mm

Height :

14.2mm

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

8V

Power Dissipation :

40W

Collector Emitter Voltage (VCEO) :

120V

Current Rating :

6A

Gain Bandwidth Product :

10MHz

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mount :

Through Hole

Width :

4.5mm

Published :

2000

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1mA ICBO

Package / Case :

TO-220-3

Packaging :

Tube

Weight :

1.8g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Base Part Number :

KSD363

Collector Emitter Breakdown Voltage :

120V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1A 5V

Polarity/Channel Type :

NPN

Number of Terminations :

3

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Max Collector Current :

6A

Number of Elements :

1

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

300V

Mounting Type :

Through Hole

Max Power Dissipation :

40W

Collector Emitter Saturation Voltage :

1V

Radiation Hardening :

No

Frequency :

10MHz

Transition Frequency :

10MHz

hFE Min :

40

Transistor Type :

NPN