KSD1691YSTU
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- Mfr.Part #
- KSD1691YSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO126-3
- Stock
- 3,548
- In Stock ：
- 3,548
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 761mg
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- KSD1691
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Element Configuration :
- Single
- Current Rating :
- 5A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Collector Current :
- 5A
- Transistor Type :
- NPN
- Power Dissipation :
- 1.3W
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 18 Weeks
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 2A 1V
- Output Power :
- 1.3W
- Collector Emitter Saturation Voltage :
- 100mV
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 1.3W
- Mounting Type :
- Through Hole
- Height :
- 11mm
- Width :
- 3.25mm
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2000
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 100
- Length :
- 8mm
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Datasheets
- KSD1691YSTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD1691YSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 2A 1V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Collector current can be as low as 5A volts at its maximum.
KSD1691YSTU Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
KSD1691YSTU Applications
There are a lot of ON Semiconductor
KSD1691YSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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