KSD1691GSTU
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- Mfr.Part #
- KSD1691GSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO126-3
- Stock
- 1,702
- In Stock ：
- 1,702
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Width :
- 3.25mm
- Base Part Number :
- KSD1691
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Weight :
- 761mg
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.3W
- Power - Max :
- 1.3W
- Terminal Finish :
- Tin (Sn)
- Height :
- 11mm
- Published :
- 2000
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 100
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 1V
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 300mV
- Pbfree Code :
- yes
- Length :
- 8mm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- HTS Code :
- 8541.29.00.95
- Datasheets
- KSD1691GSTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSD1691GSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2A 1V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 5A volts at its maximum.
KSD1691GSTU Features
the DC current gain for this device is 200 @ 2A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
KSD1691GSTU Applications
There are a lot of ON Semiconductor
KSD1691GSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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