KSD1616ALTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Weight :

240mg

Frequency :

160MHz

Height :

5.33mm

Collector Emitter Saturation Voltage :

300mV

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Published :

2004

Power Dissipation :

750mW

Base Part Number :

KSD1616

Vce Saturation (Max) @ Ib, Ic :

300mV @ 50mA, 1A

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

hFE Min :

135

Mounting Type :

Through Hole

Max Collector Current :

1A

Radiation Hardening :

No

Lead Free :

Lead Free

Mount :

Through Hole

Voltage - Rated DC :

60V

Terminal Position :

BOTTOM

Length :

5.2mm

Gain Bandwidth Product :

160MHz

Emitter Base Voltage (VEBO) :

6V

Width :

4.19mm

Factory Lead Time :

6 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Application :

SWITCHING

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transition Frequency :

160MHz

Max Power Dissipation :

750mW

Collector Emitter Breakdown Voltage :

60V

Packaging :

Tape and Box (TB)

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

60V

ECCN Code :

EAR99

Number of Pins :

3

Element Configuration :

Single

Collector Base Voltage (VCBO) :

120V

Current Rating :

1A

Collector Emitter Voltage (VCEO) :

60V