KSD1616AGBU
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- Mfr.Part #
- KSD1616AGBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 22,918
- In Stock ：
- 22,918
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Current Rating :
- 1A
- Weight :
- 179mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Transition Frequency :
- 160MHz
- Power Dissipation :
- 750mW
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Frequency :
- 160MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 750mW
- Published :
- 2007
- Base Part Number :
- KSD1616
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Gain Bandwidth Product :
- 160MHz
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- hFE Min :
- 135
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- KSD1616AGBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSD1616AGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 160MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
KSD1616AGBU Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AGBU Applications
There are a lot of ON Semiconductor
KSD1616AGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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