KSD1408YTU

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Mfr.Part #
KSD1408YTU
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 80V 4A TO220F-3
Stock
12,679
In Stock :
12,679

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Published :
2000
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Power Dissipation :
25W
Case Connection :
Isolated
Current Rating :
4A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Transistor Application :
AMPLIFIER
Frequency :
8MHz
Polarity/Channel Type :
NPN
Terminal Finish :
Tin (Sn)
Power Dissipation :
25W
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 300mA, 3A
Factory Lead Time :
4 Weeks
Emitter Base Voltage (VEBO) :
5V
Gain Bandwidth Product :
8MHz
Reach Compliance Code :
not_compliant
Packaging :
Tube
Height :
15.87mm
Element Configuration :
Single
Transition Frequency :
8MHz
Voltage - Rated DC :
80V
Current - Collector Cutoff (Max) :
30μA ICBO
Width :
2.54mm
Number of Terminations :
3
Number of Elements :
1
Collector Base Voltage (VCBO) :
80V
Weight :
2.27g
Mount :
Through Hole
Collector Emitter Saturation Voltage :
450mV
Number of Pins :
3
Lead Free :
Lead Free
ECCN Code :
EAR99
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Voltage (VCEO) :
80V
Max Collector Current :
4A
Length :
10.16mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 5V
Package / Case :
TO-220-3 Full Pack
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
hFE Min :
40
Datasheets
KSD1408YTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSD1408YTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, KSD1408YTU pinout, KSD1408YTU datasheet PDF, KSD1408YTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD1408YTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSD1408YTU


NPN 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

KSD1408YTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 450mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 300mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

KSD1408YTU Features


the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz


KSD1408YTU Applications


There are a lot of ON Semiconductor
KSD1408YTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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