KSC815YTA
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- Mfr.Part #
- KSC815YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92-3
- Stock
- 41,893
- In Stock ：
- 41,893
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 200mA
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 200MHz
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 45V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Power Dissipation :
- 400mW
- Collector Emitter Saturation Voltage :
- 150mV
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Base Part Number :
- KSC815
- hFE Min :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Transition Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Weight :
- 240mg
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 1V
- Published :
- 2007
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 400mW
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 200mA
- Mount :
- Through Hole
- Datasheets
- KSC815YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC815YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 1V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
KSC815YTA Features
the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 200MHz
KSC815YTA Applications
There are a lot of ON Semiconductor
KSC815YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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