KSC388CYTA
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- Mfr.Part #
- KSC388CYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A TO92-3
- Stock
- 7,021
- In Stock ：
- 7,021
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 25V
- Gain Bandwidth Product :
- 300MHz
- Transistor Type :
- NPN
- hFE Min :
- 20
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 4V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 12.5mA 12.5V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LIFETIME (Last Updated: 6 days ago)
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 200mV
- Current Rating :
- 50mA
- Max Power Dissipation :
- 300mW
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Max Collector Current :
- 50mA
- Number of Terminations :
- 3
- Published :
- 2007
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 1.5mA, 15mA
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Weight :
- 240mg
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 25V
- Transistor Element Material :
- SILICON
- Base Part Number :
- KSC388
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 25V
- Frequency :
- 300MHz
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 25V
- Transistor Application :
- AMPLIFIER
- Datasheets
- KSC388CYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC388CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 12.5mA 12.5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 1.5mA, 15mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.
KSC388CYTA Features
the DC current gain for this device is 20 @ 12.5mA 12.5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 1.5mA, 15mA
the emitter base voltage is kept at 4V
the current rating of this device is 50mA
a transition frequency of 300MHz
KSC388CYTA Applications
There are a lot of ON Semiconductor
KSC388CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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