KSB772YS
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- Mfr.Part #
- KSB772YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO126-3
- Stock
- 2,615
- In Stock ：
- 2,615
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2002
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 80MHz
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Voltage - Rated DC :
- -30V
- Weight :
- 761mg
- Gain Bandwidth Product :
- 80MHz
- Collector Base Voltage (VCBO) :
- -40V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 3A
- Current Rating :
- -3A
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 1W
- Frequency :
- 80MHz
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Base Part Number :
- KSB772
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 60
- Collector Emitter Saturation Voltage :
- -300mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Datasheets
- KSB772YS
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSB772YS Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSB772YS Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 80MHz
KSB772YS Applications
There are a lot of ON Semiconductor
KSB772YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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