KSB596YTU
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- Mfr.Part #
- KSB596YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO220-3
- Stock
- 229
- In Stock ：
- 229
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Width :
- 4.5mm
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -1V
- Collector Base Voltage (VCBO) :
- -80V
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 70μA ICBO
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 300mA, 3A
- Pbfree Code :
- yes
- Frequency :
- 3MHz
- Length :
- 9.2mm
- Number of Terminations :
- 3
- Base Part Number :
- KSB596
- Mount :
- Through Hole
- Packaging :
- Tube
- Current Rating :
- -4A
- Published :
- 2000
- Voltage - Rated DC :
- -80V
- Gain Bandwidth Product :
- 3MHz
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 30W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Height :
- 14.2mm
- hFE Min :
- 40
- Transition Frequency :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Weight :
- 1.8g
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 4A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -5V
- Power Dissipation :
- 30W
- Datasheets
- KSB596YTU
PNP 150°C TJ 70μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
KSB596YTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 4A volts.
KSB596YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
KSB596YTU Applications
There are a lot of ON Semiconductor
KSB596YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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