KSA733GBU
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- Mfr.Part #
- KSA733GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 43,824
- In Stock ：
- 43,824
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSA733
- Current Rating :
- -150mA
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Transition Frequency :
- 180MHz
- Lead Free :
- Lead Free
- Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Width :
- 3.86mm
- Collector Emitter Saturation Voltage :
- -180mV
- Packaging :
- Bulk
- Frequency :
- 180MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 4.58mm
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Max Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2002
- Height :
- 4.58mm
- Number of Pins :
- 3
- Max Collector Current :
- 150mA
- Weight :
- 179mg
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -50V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- -60V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSA733GBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSA733GBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -150mA.A transition frequency of 180MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSA733GBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz
KSA733GBU Applications
There are a lot of ON Semiconductor
KSA733GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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