K4B4G1646E-BYK000
- Mfr.Part #
- K4B4G1646E-BYK000
- Manufacturer
- Samsung Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- DDR3-1600 4GB (256MX16)1.25NS CL
- Stock
- 17,474
- In Stock :
- 17,474
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- Manufacturer :
- Samsung Semiconductor
- Product Category :
- Memory
- Minimum Operating Temperature (°C) :
- 0
- Organization :
- 256MX16
- Standard Package Name :
- BGA
- Chip Density (bit) :
- 4G
- Maximum Operating Temperature (°C) :
- 95
- Package Length :
- 13.3
- Data Bus Width (bit) :
- 16
- Operating Current (mA) :
- 115
- DRAM Type :
- DDR3L SDRAM
- Pin Count :
- 96
- EU RoHS :
- Compliant
- Maximum Operating Supply Voltage (V) :
- 1.45|1.575
- Number of Words per Bank :
- 32M
- Automotive :
- No
- Mounting :
- Surface Mount
- Number of Bits/Word (bit) :
- 16
- Supplier Temperature Grade :
- COMMERCIAL
- PCB changed :
- 96
- Maximum Access Time (ns) :
- 0.225
- Lead Shape :
- Ball
- PPAP :
- No
- Address Bus Width (bit) :
- 18
- Package Width :
- 7.5
- Supplier Package :
- FBGA
- Number of I/O Lines (bit) :
- 16
- Minimum Operating Supply Voltage (V) :
- 1.283|1.425
- Number of Internal Banks :
- 8
- Typical Operating Supply Voltage (V) :
- 1.35|1.5
- ECCN (US) :
- EAR99
- Maximum Clock Rate (MHz) :
- 1600
- Datasheets
- K4B4G1646E-BYK000
96 Pin Memory IC
K4B4G1646E-BYK0000 Overview
There are 96 pins on this memory device, which indicates it has 96 memory locations in it.
K4B4G1646E-BYK0000 Features
K4B4G1646E-BYK0000 Applications
There are a lot of Samsung Semiconductor
K4B4G1646E-BYK0000 Memory applications.
- cell phones
- eSRAM
- mainframes
- multimedia computers
- networking
- personal computers
- servers
- supercomputers
- telecommunications
- workstations,
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| K4B4G1646B-HCKD | Samsung Semiconductor | 0 | - |
















