K4B4G1646E-BYK000

Manufacturer :

Samsung Semiconductor

Product Category :

Memory

Maximum Access Time (ns) :

0.225

Number of Internal Banks :

8

Organization :

256MX16

Maximum Operating Supply Voltage (V) :

1.45|1.575

Chip Density (bit) :

4G

Address Bus Width (bit) :

18

Maximum Clock Rate (MHz) :

1600

Automotive :

No

Mounting :

Surface Mount

Data Bus Width (bit) :

16

Package Width :

7.5

Package Length :

13.3

Number of Words per Bank :

32M

Standard Package Name :

BGA

EU RoHS :

Compliant

Minimum Operating Supply Voltage (V) :

1.283|1.425

Minimum Operating Temperature (°C) :

0

Operating Current (mA) :

115

Number of Bits/Word (bit) :

16

Typical Operating Supply Voltage (V) :

1.35|1.5

ECCN (US) :

EAR99

DRAM Type :

DDR3L SDRAM

PPAP :

No

Supplier Temperature Grade :

COMMERCIAL

Pin Count :

96

Lead Shape :

Ball

Number of I/O Lines (bit) :

16

PCB changed :

96

Maximum Operating Temperature (°C) :

95

Supplier Package :

FBGA