K4B4G1646E-BYK000

Manufacturer :

Samsung Semiconductor

Product Category :

Memory

EU RoHS :

Compliant

PCB changed :

96

DRAM Type :

DDR3L SDRAM

Supplier Temperature Grade :

COMMERCIAL

Operating Current (mA) :

115

Number of Internal Banks :

8

Maximum Clock Rate (MHz) :

1600

Organization :

256MX16

Minimum Operating Supply Voltage (V) :

1.283|1.425

Mounting :

Surface Mount

Standard Package Name :

BGA

Package Length :

13.3

Maximum Operating Supply Voltage (V) :

1.45|1.575

Typical Operating Supply Voltage (V) :

1.35|1.5

Lead Shape :

Ball

Data Bus Width (bit) :

16

Maximum Access Time (ns) :

0.225

Number of Bits/Word (bit) :

16

Number of I/O Lines (bit) :

16

Package Width :

7.5

Address Bus Width (bit) :

18

ECCN (US) :

EAR99

Maximum Operating Temperature (°C) :

95

Number of Words per Bank :

32M

Automotive :

No

Minimum Operating Temperature (°C) :

0

Pin Count :

96

Supplier Package :

FBGA

PPAP :

No

Chip Density (bit) :

4G