JANTXV2N6250
- Mfr.Part #
- JANTXV2N6250
- Manufacturer
- Microsemi
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 275V 10A TO3
- Stock
- 35,193
- In Stock :
- 35,193
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-204AA
- Collector Base Voltage (VCBO) :
- 375V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 10A 3V
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Max Power Dissipation :
- 6W
- Transition Frequency :
- 2.5MHz
- Terminal Form :
- PIN/PEG
- Published :
- 2007
- Mount :
- Through Hole
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 6W
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 275V
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 10A
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.25A, 10A
- Transistor Type :
- NPN
- Package / Case :
- TO-3
- JESD-30 Code :
- O-MBFM-P2
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Contact Plating :
- Lead, Tin
- Series :
- Military, MIL-PRF-19500/510
- Current - Collector Cutoff (Max) :
- 1mA
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 2
- Qualification Status :
- Qualified
- Datasheets
- JANTXV2N6250
NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole
JANTXV2N6250 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 10A 3V.When VCE saturation is 1.5V @ 1.25A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 2.5MHz.A maximum collector current of 10A volts can be achieved.
JANTXV2N6250 Features
the DC current gain for this device is 8 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.25A, 10A
the emitter base voltage is kept at 6V
a transition frequency of 2.5MHz
JANTXV2N6250 Applications
There are a lot of Microsemi Corporation
JANTXV2N6250 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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