JANTXV2N6250

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Mfr.Part #
JANTXV2N6250
Manufacturer
Microsemi
Package / Case
TO-3
Datasheet
Download
Description
TRANS NPN 275V 10A TO3
Stock
35,193
In Stock :
35,193

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
2
Mounting Type :
Through Hole
Published :
2007
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e0
Operating Temperature :
-65°C~200°C TJ
Qualification Status :
Qualified
Packaging :
Bulk
Contact Plating :
Lead, Tin
Current - Collector Cutoff (Max) :
1mA
JESD-30 Code :
O-MBFM-P2
Factory Lead Time :
20 Weeks
Transistor Type :
NPN
Case Connection :
COLLECTOR
Transition Frequency :
2.5MHz
ECCN Code :
EAR99
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Collector Emitter Voltage (VCEO) :
275V
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-3
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1.25A, 10A
Terminal Position :
BOTTOM
RoHS Status :
Non-RoHS Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 10A 3V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Collector Current :
10A
Max Power Dissipation :
6W
Terminal Finish :
Tin/Lead (Sn/Pb)
Terminal Form :
PIN/PEG
Emitter Base Voltage (VEBO) :
6V
Pbfree Code :
No
Number of Elements :
1
Collector Base Voltage (VCBO) :
375V
JEDEC-95 Code :
TO-204AA
Mount :
Through Hole
Series :
Military, MIL-PRF-19500/510
Power Dissipation :
6W
Number of Terminations :
2
Datasheets
JANTXV2N6250
Introducing Transistors - Bipolar (BJT) - Single Microsemi JANTXV2N6250 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-3, Number of Terminations:2, JANTXV2N6250 pinout, JANTXV2N6250 datasheet PDF, JANTXV2N6250 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JANTXV2N6250 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole

JANTXV2N6250 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 10A 3V.When VCE saturation is 1.5V @ 1.25A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 2.5MHz.A maximum collector current of 10A volts can be achieved.

JANTXV2N6250 Features


the DC current gain for this device is 8 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.25A, 10A
the emitter base voltage is kept at 6V
a transition frequency of 2.5MHz


JANTXV2N6250 Applications


There are a lot of Microsemi Corporation
JANTXV2N6250 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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