JANTXV2N6250

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Mfr.Part #
JANTXV2N6250
Manufacturer
Microsemi
Package / Case
TO-3
Datasheet
Download
Description
TRANS NPN 275V 10A TO3
Stock
35,193
In Stock :
35,193

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-204AA
Collector Base Voltage (VCBO) :
375V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 10A 3V
JESD-609 Code :
e0
Terminal Finish :
Tin/Lead (Sn/Pb)
Transistor Element Material :
SILICON
Number of Terminations :
2
Emitter Base Voltage (VEBO) :
6V
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Max Power Dissipation :
6W
Transition Frequency :
2.5MHz
Terminal Form :
PIN/PEG
Published :
2007
Mount :
Through Hole
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
6W
Factory Lead Time :
20 Weeks
Mounting Type :
Through Hole
Number of Elements :
1
Operating Temperature :
-65°C~200°C TJ
Collector Emitter Voltage (VCEO) :
275V
Terminal Position :
BOTTOM
Max Collector Current :
10A
Pbfree Code :
No
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1.25A, 10A
Transistor Type :
NPN
Package / Case :
TO-3
JESD-30 Code :
O-MBFM-P2
Configuration :
Single
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Contact Plating :
Lead, Tin
Series :
Military, MIL-PRF-19500/510
Current - Collector Cutoff (Max) :
1mA
RoHS Status :
Non-RoHS Compliant
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
2
Qualification Status :
Qualified
Datasheets
JANTXV2N6250
Introducing Transistors - Bipolar (BJT) - Single Microsemi JANTXV2N6250 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-3, JANTXV2N6250 pinout, JANTXV2N6250 datasheet PDF, JANTXV2N6250 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JANTXV2N6250 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole

JANTXV2N6250 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 10A 3V.When VCE saturation is 1.5V @ 1.25A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 2.5MHz.A maximum collector current of 10A volts can be achieved.

JANTXV2N6250 Features


the DC current gain for this device is 8 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.25A, 10A
the emitter base voltage is kept at 6V
a transition frequency of 2.5MHz


JANTXV2N6250 Applications


There are a lot of Microsemi Corporation
JANTXV2N6250 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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