JANTXV2N5680
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- Mfr.Part #
- JANTXV2N5680
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 120V 1A TO39
- Stock
- 38,406
- In Stock ：
- 38,406
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 120V
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Terminal Form :
- Wire
- Published :
- 2002
- Transistor Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Contact Plating :
- Lead, Tin
- Collector Base Voltage (VCBO) :
- 120V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 30MHz
- JESD-609 Code :
- e0
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Packaging :
- Bulk
- Power Dissipation :
- 1W
- Factory Lead Time :
- 20 Weeks
- Max Power Dissipation :
- 1W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Series :
- Military, MIL-PRF-19500/582
- Datasheets
- JANTXV2N5680
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5680 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 250mA 2V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N5680 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JANTXV2N5680 Applications
There are a lot of Microsemi Corporation
JANTXV2N5680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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