JANTXV2N5582
- Mfr.Part #
- JANTXV2N5582
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO46-3
- Stock
- 21,275
- In Stock :
- 21,275
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/423
- Factory Lead Time :
- 23 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- JESD-30 Code :
- O-MBCY-W3
- HTS Code :
- 8541.21.00.95
- Published :
- 2002
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- ECCN Code :
- EAR99
- Power - Max :
- 500mW
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 800mA
- Number of Elements :
- 1
- Max Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 1V
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Turn On Time-Max (ton) :
- 35ns
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Turn Off Time-Max (toff) :
- 300ns
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Terminal Form :
- Wire
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Reference Standard :
- MIL-19500/423E
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Contact Plating :
- Lead, Tin
- Collector Base Voltage (VCBO) :
- 75V
- Datasheets
- JANTXV2N5582
NPN -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTXV2N5582 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Maximum collector currents can be below 800mA volts.
JANTXV2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JANTXV2N5582 Applications
There are a lot of Microsemi Corporation
JANTXV2N5582 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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