JANTXV2N3867
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- Mfr.Part #
- JANTXV2N3867
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.003A TO5
- Stock
- 45,850
- In Stock ：
- 45,850
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Turn On Time-Max (ton) :
- 100ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A 2V
- Configuration :
- Single
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Turn Off Time-Max (toff) :
- 600ns
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Power - Max :
- 1W
- Pin Count :
- 2
- Published :
- 2007
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Pbfree Code :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Series :
- Military, MIL-PRF-19500/350
- HTS Code :
- 8541.29.00.95
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Transistor Type :
- PNP
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- JANTXV2N3867
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3867S Overview
In this device, the DC current gain is 40 @ 1.5A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 250mA, 2.5A.Maximum collector currents can be below 3A volts.
JANTXV2N3867S Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
JANTXV2N3867S Applications
There are a lot of Microsemi Corporation
JANTXV2N3867S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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