JANTXV2N3735
- Mfr.Part #
- JANTXV2N3735
- Manufacturer
- Microsemi
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO39
- Stock
- 1,671
- In Stock :
- 1,671
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1.5A
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 900mV
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- Pbfree Code :
- No
- Transistor Type :
- NPN
- Turn Off Time-Max (toff) :
- 60ns
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Configuration :
- Single
- JESD-609 Code :
- e0
- HTS Code :
- 8541.29.00.95
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Terminations :
- 3
- Power - Max :
- 1W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/395
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 75V
- Turn On Time-Max (ton) :
- 48ns
- Published :
- 2007
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Datasheets
- JANTXV2N3735
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N3735 Overview
In this device, the DC current gain is 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 100mA, 1A.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
JANTXV2N3735 Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
JANTXV2N3735 Applications
There are a lot of Microsemi Corporation
JANTXV2N3735 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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