JANTXV2N3634
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- Mfr.Part #
- JANTXV2N3634
- Manufacturer
- Microchip Technology
- Package / Case
- TO-39
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A TO39
- Stock
- 35,281
- In Stock ：
- 35,281
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Series :
- Military, MIL-PRF-19500/357
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 140V
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 10μA
- Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Published :
- 2007
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- Turn Off Time-Max (toff) :
- 650ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Max Collector Current :
- 1A
- Turn On Time-Max (ton) :
- 200ns
- Terminal Form :
- Wire
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- PNP
- Pin Count :
- 2
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 140V
- Transistor Type :
- PNP
- Package / Case :
- TO-39
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Transition Frequency :
- 150MHz
- Configuration :
- Single
- Number of Pins :
- 3
- Qualification Status :
- Qualified
- Packaging :
- Bulk
- Datasheets
- JANTXV2N3634
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-39 Bulk Through Hole
JANTXV2N3634 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N3634 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
JANTXV2N3634 Applications
There are a lot of Microsemi Corporation
JANTXV2N3634 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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