JANTXV2N2880
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- Mfr.Part #
- JANTXV2N2880
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 5A TO59
- Stock
- 7,445
- In Stock ：
- 7,445
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Transition Frequency :
- 30MHz
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Additional Feature :
- High Reliability
- Emitter Base Voltage (VEBO) :
- 8V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current - Collector Cutoff (Max) :
- 20μA
- Max Power Dissipation :
- 2W
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Mount :
- Stud
- Qualification Status :
- Qualified
- Factory Lead Time :
- 24 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/315
- Terminal Form :
- UNSPECIFIED
- Collector Base Voltage (VCBO) :
- 110V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2W
- Configuration :
- Single
- JESD-609 Code :
- e0
- Max Collector Current :
- 5A
- Packaging :
- Bulk
- Mounting Type :
- Stud Mount
- Number of Elements :
- 1
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Terminal Position :
- UPPER
- Datasheets
- JANTXV2N2880
NPN -65°C~200°C TJ 20μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Stud Mount
JANTXV2N2880 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 5A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
JANTXV2N2880 Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 8V
a transition frequency of 30MHz
JANTXV2N2880 Applications
There are a lot of Microsemi Corporation
JANTXV2N2880 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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