JANTXV2N2222A

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Mfr.Part #
JANTXV2N2222A
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 50V 0.8A TO18
Stock
49,573
In Stock :
49,573

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Bulk
Max Collector Current :
800mA
Emitter Base Voltage (VEBO) :
6V
Series :
Military, MIL-PRF-19500/255
Power Dissipation :
500mW
Power - Max :
500mW
Transistor Type :
NPN
Supplier Device Package :
TO-18 (TO-206AA)
Factory Lead Time :
8 Weeks
Mount :
Through Hole
Mounting Type :
Through Hole
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Collector Base Voltage (VCBO) :
75V
Operating Temperature :
-65°C~200°C TJ
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Polarity :
NPN
Published :
2007
Collector Emitter Breakdown Voltage :
50V
Collector Emitter Voltage (VCEO) :
50V
Package / Case :
TO-206AA, TO-18-3 Metal Can
Lead Free :
Contains Lead
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
50nA
Number of Elements :
1
Max Power Dissipation :
500mW
RoHS Status :
Non-RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-65°C
Current - Collector (Ic) (Max) :
800mA
Max Operating Temperature :
200°C
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheets
JANTXV2N2222A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2222A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-206AA, TO-18-3 Metal Can, JANTXV2N2222A pinout, JANTXV2N2222A datasheet PDF, JANTXV2N2222A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANTXV2N2222A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JANTXV2N2222A


NPN -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole

JANTXV2N2222A Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Supplier device package TO-18 (TO-206AA) comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 800mA volts.

JANTXV2N2222A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18 (TO-206AA)


JANTXV2N2222A Applications


There are a lot of Microsemi Corporation
JANTXV2N2222A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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